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MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
FS2ASJ-3
OUTLINE DRAWING
6.5 5.0 0.2
Dimensions in mm
r
5.5 0.2
1.5 0.2
0.5 0.1
1.0MAX.
2.3MIN.
10MAX.
1.0
A
0.5 0.2 0.8
0.9MAX.
2.3
2.3
2.3
q
w
e
wr q GATE w DRAIN e SOURCE r DRAIN e
4V DRIVE VDSS ................................................................................ 150V rDS (ON) (MAX) .............................................................. 0.75 ID ............................................................................................ 2A Integrated Fast Recovery Diode (TYP.) ............. 65ns
q
MP-3
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 150 20 2 8 2 2 8 20 -55 ~ +150 -55 ~ +150 0.26
Unit V V A A A A A W C C g
Feb.1999
L = 100H
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 4V ID = 1A, VGS = 10V ID = 1A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 0.58 0.61 0.58 4.5 360 62 16 11 9 35 13 1.0 -- 65 Max. -- 0.1 0.1 2.0 0.75 0.81 0.75 -- -- -- -- -- -- -- -- 1.5 6.25 --
Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50
IS = 1A, VGS = 0V Channel to case IS = 2A, dis/dt = -100A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 40
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 2 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2
TC = 25C Single Pulse DC
32
tw = 10ms 100ms 1ms 10ms
24
16
8
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 5.0
Tc = 25C Pulse Test
2.0
Tc = 25C Pulse Test VGS = 10V 6V 4V 3V 2.5V
DRAIN CURRENT ID (A)
4.0
VGS = 10V 6V 4V
DRAIN CURRENT ID (A)
PD = 20W 3V
1.6
3.0
1.2
2.0
2.5V
0.8
1.0
0.4
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0
Tc = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0
Tc = 25C Pulse Test VGS = 4V 10V
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4.0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
10
0.8
3.0
ID = 3A 2A
0.6
2.0
0.4
1.0
1A
0.2 0 10-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A)
0
0
2
4
6
8
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10
Tc = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 VDS = 5V 7 Pulse Test 5 4 3 2 100 7 5 4 3 2
TC = 25C 75C 125C
DRAIN CURRENT ID (A)
6
4
2
FORWARD TRANSFER ADMITTANCE yfs (S)
8
0
0
2
4
6
8
10
10-1 -1 10
2 3 4 5 7 100
2 3 4 5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103
Tch = 25C VGS = 0V 7 f = 1MHZ
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -1 10
tf td(off) td(on) tr Tch = 25C VDD = 80V VGS = 10V RGEN = RGS = 50
102 7 5 3 2 101 7 5 3 2
Coss
Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
5 3 2
Ciss
2 3 4 5 7 100
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 10
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
10
Tch = 25C ID = 2A
8
8
6
VDS = 50V 80V 100V
6
TC = 125C
4
4
75C 25C
2
2
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
3.2
2.4
1.6
0.8
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM
tw T D= tw T
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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